IC-4 - 6th International Conference
Materials and Devices Technologies for Energy-efficient Neuromorphic and Unconventional Computing
Convener:
Sabina SPIGA, CNR-IMM Agrate Brianza, Italy
Members:
Gina ADAM, George Washington University, USA
Lambert ALFF, Technische Universität Darmstadt, Germany
Marco BERNASCONI, University of Milano-Bicocca, Italy
Valeria BRAGAGLIA, IBM, Switzerland
Stefano BRIVIO, CNR-IMM, Italy
Ayan Roy CHAUDHURI, Indian Institute of Technology Kharagpur, India
Fernando CORINTO, Politecnico di Torino, Italy
Elisa DONATI, University of Zurich, Switzerland
Paschalis GKOUPIDENIS, North Carolina State University, USA
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Cheol Seong HWANG, Seoul National University, South Korea
Thomas KAMPFE, TU Braunschweig, Germany
Asal KIAZADEH, CENIMAT, Portugal
Kyung Min KIM, KAIST, South Korea
Zdenka KUNCIC, University of Sydney, Australia
Can LI, The University of Hong Kong, Hong Kong
Mathieu LUISIER, ETH Zurich, Switzerland
Sayani MAJUMDAR, Tampere University, Finland
Stephan MENZEL, Forschungszentrum Jülich GmbH, Germany
Paolo MILANI, Università di Milano, Italy
Enrique MIRANDA, Universitat Autonoma de Barcelona, Spain
Beatriz NOHEDA, University of Groningen, Netherlands
Francesco Maria PUGLISI, Università di Modena e Reggio Emilia, Italy
Andrea REDAELLI, STMicroelectronics, Italy
Bruno ROMEIRA, INL, Portugal
Francesca SANTORO, Forschungszentrum Jülich, Germany
Dmitri STRUKOV, University of California, Santa Barbara, USA
Takashi TSUCHIYA, National Institute for Materials Science (NIMS), Japan
Qiangfei XIA, University of Massachusetts, USA
Jianhua (Joshua) YANG, University of Southern California, USA
Sabina SPIGA, CNR-IMM Agrate Brianza, Italy
Members:
Gina ADAM, George Washington University, USA
Lambert ALFF, Technische Universität Darmstadt, Germany
Marco BERNASCONI, University of Milano-Bicocca, Italy
Valeria BRAGAGLIA, IBM, Switzerland
Stefano BRIVIO, CNR-IMM, Italy
Ayan Roy CHAUDHURI, Indian Institute of Technology Kharagpur, India
Fernando CORINTO, Politecnico di Torino, Italy
Elisa DONATI, University of Zurich, Switzerland
Paschalis GKOUPIDENIS, North Carolina State University, USA
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Cheol Seong HWANG, Seoul National University, South Korea
Thomas KAMPFE, TU Braunschweig, Germany
Asal KIAZADEH, CENIMAT, Portugal
Kyung Min KIM, KAIST, South Korea
Zdenka KUNCIC, University of Sydney, Australia
Can LI, The University of Hong Kong, Hong Kong
Mathieu LUISIER, ETH Zurich, Switzerland
Sayani MAJUMDAR, Tampere University, Finland
Stephan MENZEL, Forschungszentrum Jülich GmbH, Germany
Paolo MILANI, Università di Milano, Italy
Enrique MIRANDA, Universitat Autonoma de Barcelona, Spain
Beatriz NOHEDA, University of Groningen, Netherlands
Francesco Maria PUGLISI, Università di Modena e Reggio Emilia, Italy
Andrea REDAELLI, STMicroelectronics, Italy
Bruno ROMEIRA, INL, Portugal
Francesca SANTORO, Forschungszentrum Jülich, Germany
Dmitri STRUKOV, University of California, Santa Barbara, USA
Takashi TSUCHIYA, National Institute for Materials Science (NIMS), Japan
Qiangfei XIA, University of Massachusetts, USA
Jianhua (Joshua) YANG, University of Southern California, USA
Matteo BALDO, Technology R&D, STMicroelectronics, Italy
Tamalika BANERJEE, University of Groninger, Netherlands
Valeria BRAGAGLIA, IBM Zurich, Switzerland
Stefano BRIVIO, CNR-IMM, Italy
Ayan Roy CHAUDHURI, Indian Institute of Technology Kharagpur, India
Jen-Sue CHEN, National Cheng Kung University, Taiwan
Giuliana DI MARTINO, University of Oxford, UK
Regina DITTMANN, Forschungszentrum Jülich, Germany
Elliot FULLER, Sandia National Laboratories, USA
Daniela GANDOLFI, Università di Modena e Reggio Emilia, Italy
Sreetosh GOSWAMI, Indian Institute of Science, India
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Liza HERRERA DIEZ, CNRS-Université Paris Saclay, France
Asal KIAZADEH, Universidade NOVA de Lisboa, Portugal
Peer KIRSCH, Merck / TU Darmstadt, Germany
Riccardo MAZZARELLO, University of Rome “La Sapienza”, Italy
Adnan MEHONIC, University College London, UK
Stephan MENZEL, Forschungszentrum Jülich, Germany
Paolo MILANI, Università di Milano, Italy
Gianluca MILANO, INRIM, Italy
Min Hyuk PARK, Seoul National University, South Korea
Eszter PIROS, TU Darmstadt, Germany
Dmitri STRUKOV, University of California, Santa Barbara, USA
Ghazi Sarwat SYED, IBM Zürich, Switzerland
Kazuya TERABE, NIMS, Japan
Ronald TETZLAFF, TU Dresden, Germany
Takashi TSUCHIYA, National Institute for Materials Science (NIMS), Japan
Ilia VALOV, Forschungszentrum Jülich, Germany
Qiangfei XIA, University of Massachusetts, USA
Bilge YILDIZ, Massachusetts Institute of Technology, USA
Tamalika BANERJEE, University of Groninger, Netherlands
Valeria BRAGAGLIA, IBM Zurich, Switzerland
Stefano BRIVIO, CNR-IMM, Italy
Ayan Roy CHAUDHURI, Indian Institute of Technology Kharagpur, India
Jen-Sue CHEN, National Cheng Kung University, Taiwan
Giuliana DI MARTINO, University of Oxford, UK
Regina DITTMANN, Forschungszentrum Jülich, Germany
Elliot FULLER, Sandia National Laboratories, USA
Daniela GANDOLFI, Università di Modena e Reggio Emilia, Italy
Sreetosh GOSWAMI, Indian Institute of Science, India
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Liza HERRERA DIEZ, CNRS-Université Paris Saclay, France
Asal KIAZADEH, Universidade NOVA de Lisboa, Portugal
Peer KIRSCH, Merck / TU Darmstadt, Germany
Riccardo MAZZARELLO, University of Rome “La Sapienza”, Italy
Adnan MEHONIC, University College London, UK
Stephan MENZEL, Forschungszentrum Jülich, Germany
Paolo MILANI, Università di Milano, Italy
Gianluca MILANO, INRIM, Italy
Min Hyuk PARK, Seoul National University, South Korea
Eszter PIROS, TU Darmstadt, Germany
Dmitri STRUKOV, University of California, Santa Barbara, USA
Ghazi Sarwat SYED, IBM Zürich, Switzerland
Kazuya TERABE, NIMS, Japan
Ronald TETZLAFF, TU Dresden, Germany
Takashi TSUCHIYA, National Institute for Materials Science (NIMS), Japan
Ilia VALOV, Forschungszentrum Jülich, Germany
Qiangfei XIA, University of Massachusetts, USA
Bilge YILDIZ, Massachusetts Institute of Technology, USA
In the modern world where sustainability and energy efficiency have become global priorities, future computing systems are expected to embrace these challenges. In the last decades, substantial advancements in device miniaturization and on the overall performance of classical computers have been achieved, also thanks to advancements in materials science and nanotechnology. Today information and communication technology (ICT), which is affecting almost all aspects of our society, consumes a significative percentage of global electric power resources. In this field, energy consumption is expected to increase in the coming years, making many applications, including those based on artificial intelligence, unsustainable. Within this framework, emerging inorganic and organic materials and memristive device technologies are key players in enabling the development of energy-efficient future unconventional computing paradigms, including in-memory computing approaches, neuromoprhic systems inspired by the brain functionality, and bioinspired information processing at the edge of biology.
This conference aims at bringing together an interdisciplinary community to discuss recent advancements in research within the fields of materials science, memory and memristive device technologies, modelling and simulation of materials and device properties, and novel computing applications.
This conference aims at bringing together an interdisciplinary community to discuss recent advancements in research within the fields of materials science, memory and memristive device technologies, modelling and simulation of materials and device properties, and novel computing applications.
Session Topics
IC-4.A Advances in memory and memristive technologies for computing: materials, devices, advanced characterization and modelling
IC-4.B1 Memristive devices for neuromorphic and unconventional computing: devices, modelling, applications
IC-4.B2 Diffusive and volatile memristors
IC-4.C Brain inspired hardware and computing