Symposium CL
Development and Application of new Functional Transparent Conducting and Semiconducting Inorganic Materials
TUESDAY JUNE 16 AFTERNOON
Room: SPELLO
Chair: Maurizio FERRARI, ITALY (Convener)
14.55 Welcome
15.00 CL-1:IL01 Rutile GeO2 and GeSnO2 Alloys: A New Family of UV-Transparent Conducting Oxides
E. KIOUPAKIS, Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
15.30 CL-1:IL03 Properties of Hydrogen in In2O3
M. STAVOLA, A. VENZIE, W.B. FOWER, Lehigh University, Bethlehem, PA, USA; L.A. BOATNER, Oak Ridge National Laboratory, Oak Ridge, TN, USA
WEDNESDAY JUNE 17 MORNING
Room: SPELLO
Chair: Silvia PIETRALUNGA, Italy
9.00 CL-1:IL05 Controlling Point Defects and Impurities in Ga2O3 and Related Alloys
C.G. VAN DE WALLE, Materials Department, University of California, Santa Barbara, CA, USA
9.30 CL-1:IL06 Probing the Electron-phonon Interactions at Superconducting LAO/STO Interfaces via Atomic-scale Vibrational EELS
WU ZHOU, School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
10.00 Break
Chair: Chris G. VAN DE WALLE, USA
10.30 CL-2:IL07 Development of High-performance p-type Oxide Transistors
YONG-YOUNG NOH, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea
11.00 CL-2:L11 Photophysics of Amorphous WO3 Thin Films as Transparent Conductive Oxides in the Near-IR
T. VIRGILI1, M. RUSSO2, A. VILLA2, H. CHEN2, A. TAGLIAFERRI2, A. CHIASERA3, A. CARLOTTO4, C. MANCARELLA5, D. DELLASEGA5, S.M. PIETRALUNGA1, 1CNR-IFN Milano, Milano, Italy; 2Dipartimento di Fisica, Politecnico di Milano, Milano, Italy; 3IFN – CNR, CSMFO Lab., Povo, Trento, Italy; 4Fondazione Bruno Kessler, Povo, Trento, Italy; 5Dipartimento di Energia, Politecnico di Milano, Milano, Italy
11.20 CL-2:IL12 Dopant Control of CuI for High Performance Transparent p-Type Electronics
MYUNG-GIL KIM, School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyunggi-do, Republic of Korea
11.50 CL-2:L19 Fabrication of p-type Copper Oxides Doped by Nitrogen and Boron Using High-power Impulse Magnetron Sputtering
J. REZEK, N. KUMAR, J. KOLOROS, P. BAROCH, Department of Physics and NTIS - European Centre of Excellence, University of West Bohemia in Pilsen, Czech Republic
(rescheduled at the request of the Presenting Author)
12.10 CL-2:IL18 Transparent Electrodes with Interplay of Conductivity and Transparency for Flexible Electronics
HYEOK KIM, University of Seoul, Seoul, South Korea
(rescheduled at the request of the Presenting Author)
THURSDAY JUNE 18 AFTERNOON
Room: SPELLO
Chair: Yong-Young NOH, South Korea
14.30 CL-2:IL13 Single Crystal Growth and Physical Properties of r-GeO2 in Comparison with Beta-Ga2O3 and Beta-(AlxGa1-x)2O3
Z. GALAZKA, Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany
15.00 CL-2:IL15 Ultra-High Mobility IGZO Thin-Film Transistors by Hydrogen-Defect Engineering
HYUN-SUK KIM, Dept. Energy and Materials Engineering, Dongguk University, Seoul, Republic of Korea
15.30 CL-3:IL21 Fully Patterned Solution-based Zinc-tin Oxide Electronics
J. DEUERMEIER1, C. SILVA1, R. MARTINS1, L. MENDES2, J. VAZ3, G. MILANO4, M. ROSERO-REALPE5, E. FORTUNATO1, R. MARTINS1, E. CARLOS1, A. KIAZADEH1, 1CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, Caparica, Portugal; 2Instituto de Telecomunicações, Lisbon and Instituto Politécnico de Leiria, Leiria, Portugal; 3Instituto de Telecomunicações, Lisbon and Instituto Superior Técnico, Universidade de Lisboa, Lisbon, Portugal; 4Advanced Materials Metrology and Life Science Division, INRiM, Torino, Italy; 5Department of Applied Science and Technology, Politecnico di Torino, Torino, Italy
16.00 Break
Chair: Zbigniew GALAZKA, Germany
16.30 CL-3:IL22 Bioinspired Flexible Sensors for Human-machine Interfaces
HYUNHYUB KO, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
17.00 CL-3:IL23 β-Ga2O3 Epitaxial Growth and Device Technologies for Power and RF Electronics
M. HIGASHIWAKI, Osaka Metropolitan University, Sakai, Osaka, Japan; Y. KUMAGAI, Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan
17.30 CL-3:IL24 CVD Based Functionalized Parylene Layer as a Flexible Gate Dielectric for Oxide Transistors
KYUNG JIN LEE, Department of Chemical Engineering and Applied Chemistry, Chungnam National University, Daejeon, Republic of Korea
(rescheduled at the request of the Presenting Author)
18.00 CL-3:IL26 Unlocking Sustainable Iontronics: Neuromorphic e-SKIN
DO HWAN KIM, Dept. of Chemical Engineering, Hanyang University, Seoul, Republic of Korea
(rescheduled at the request of the Presenting Author)
FRIDAY JUNE 19 MORNING
Room: SPELLO
Chair: Maurizio FERRARI, Italy
9.00 CL-2:IL16 Copper Iodide - A New Material for Active p-Type Thin Film Electronics
M. GRUNDMANN, Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Leipzig, Germany
9.30 CL-2:IL17 Engineered Transparent Conductive Oxides: From Structure To Performance
P. LLONTOP, M. MORALES-MASIS, MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
10.00 Break
10.30 CL-2:L20 Sustainable Thin-film Temperature Sensors on Shellac Coated Wood Substrates
F. MASOUMI, R. ZAMBONI, N. MÜNZENRIEDER, Faculty of Engineering, Free University of Bozen-Bolzano, Bozen-Bolzano, Italy; A. NIJKOOPS, Laboratory of Food Process Engineering, Wageningen University and Research, Wageningen, the Netherlands
10.50 CL-3:IL25 Oxide Electronics in Unconventional, Flexible and Natural Substrates
N. MÜNZENRIEDER, Faculty of Engineering, Free University of Bozen-Bolzano, Bolzano, Italy
Room: SPELLO
Chair: Maurizio FERRARI, ITALY (Convener)
14.55 Welcome
15.00 CL-1:IL01 Rutile GeO2 and GeSnO2 Alloys: A New Family of UV-Transparent Conducting Oxides
E. KIOUPAKIS, Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
15.30 CL-1:IL03 Properties of Hydrogen in In2O3
M. STAVOLA, A. VENZIE, W.B. FOWER, Lehigh University, Bethlehem, PA, USA; L.A. BOATNER, Oak Ridge National Laboratory, Oak Ridge, TN, USA
WEDNESDAY JUNE 17 MORNING
Room: SPELLO
Chair: Silvia PIETRALUNGA, Italy
9.00 CL-1:IL05 Controlling Point Defects and Impurities in Ga2O3 and Related Alloys
C.G. VAN DE WALLE, Materials Department, University of California, Santa Barbara, CA, USA
9.30 CL-1:IL06 Probing the Electron-phonon Interactions at Superconducting LAO/STO Interfaces via Atomic-scale Vibrational EELS
WU ZHOU, School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
10.00 Break
Chair: Chris G. VAN DE WALLE, USA
10.30 CL-2:IL07 Development of High-performance p-type Oxide Transistors
YONG-YOUNG NOH, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea
11.00 CL-2:L11 Photophysics of Amorphous WO3 Thin Films as Transparent Conductive Oxides in the Near-IR
T. VIRGILI1, M. RUSSO2, A. VILLA2, H. CHEN2, A. TAGLIAFERRI2, A. CHIASERA3, A. CARLOTTO4, C. MANCARELLA5, D. DELLASEGA5, S.M. PIETRALUNGA1, 1CNR-IFN Milano, Milano, Italy; 2Dipartimento di Fisica, Politecnico di Milano, Milano, Italy; 3IFN – CNR, CSMFO Lab., Povo, Trento, Italy; 4Fondazione Bruno Kessler, Povo, Trento, Italy; 5Dipartimento di Energia, Politecnico di Milano, Milano, Italy
11.20 CL-2:IL12 Dopant Control of CuI for High Performance Transparent p-Type Electronics
MYUNG-GIL KIM, School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyunggi-do, Republic of Korea
11.50 CL-2:L19 Fabrication of p-type Copper Oxides Doped by Nitrogen and Boron Using High-power Impulse Magnetron Sputtering
J. REZEK, N. KUMAR, J. KOLOROS, P. BAROCH, Department of Physics and NTIS - European Centre of Excellence, University of West Bohemia in Pilsen, Czech Republic
(rescheduled at the request of the Presenting Author)
12.10 CL-2:IL18 Transparent Electrodes with Interplay of Conductivity and Transparency for Flexible Electronics
HYEOK KIM, University of Seoul, Seoul, South Korea
(rescheduled at the request of the Presenting Author)
THURSDAY JUNE 18 AFTERNOON
Room: SPELLO
Chair: Yong-Young NOH, South Korea
14.30 CL-2:IL13 Single Crystal Growth and Physical Properties of r-GeO2 in Comparison with Beta-Ga2O3 and Beta-(AlxGa1-x)2O3
Z. GALAZKA, Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany
15.00 CL-2:IL15 Ultra-High Mobility IGZO Thin-Film Transistors by Hydrogen-Defect Engineering
HYUN-SUK KIM, Dept. Energy and Materials Engineering, Dongguk University, Seoul, Republic of Korea
15.30 CL-3:IL21 Fully Patterned Solution-based Zinc-tin Oxide Electronics
J. DEUERMEIER1, C. SILVA1, R. MARTINS1, L. MENDES2, J. VAZ3, G. MILANO4, M. ROSERO-REALPE5, E. FORTUNATO1, R. MARTINS1, E. CARLOS1, A. KIAZADEH1, 1CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, Caparica, Portugal; 2Instituto de Telecomunicações, Lisbon and Instituto Politécnico de Leiria, Leiria, Portugal; 3Instituto de Telecomunicações, Lisbon and Instituto Superior Técnico, Universidade de Lisboa, Lisbon, Portugal; 4Advanced Materials Metrology and Life Science Division, INRiM, Torino, Italy; 5Department of Applied Science and Technology, Politecnico di Torino, Torino, Italy
16.00 Break
Chair: Zbigniew GALAZKA, Germany
16.30 CL-3:IL22 Bioinspired Flexible Sensors for Human-machine Interfaces
HYUNHYUB KO, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
17.00 CL-3:IL23 β-Ga2O3 Epitaxial Growth and Device Technologies for Power and RF Electronics
M. HIGASHIWAKI, Osaka Metropolitan University, Sakai, Osaka, Japan; Y. KUMAGAI, Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan
17.30 CL-3:IL24 CVD Based Functionalized Parylene Layer as a Flexible Gate Dielectric for Oxide Transistors
KYUNG JIN LEE, Department of Chemical Engineering and Applied Chemistry, Chungnam National University, Daejeon, Republic of Korea
(rescheduled at the request of the Presenting Author)
18.00 CL-3:IL26 Unlocking Sustainable Iontronics: Neuromorphic e-SKIN
DO HWAN KIM, Dept. of Chemical Engineering, Hanyang University, Seoul, Republic of Korea
(rescheduled at the request of the Presenting Author)
FRIDAY JUNE 19 MORNING
Room: SPELLO
Chair: Maurizio FERRARI, Italy
9.00 CL-2:IL16 Copper Iodide - A New Material for Active p-Type Thin Film Electronics
M. GRUNDMANN, Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Leipzig, Germany
9.30 CL-2:IL17 Engineered Transparent Conductive Oxides: From Structure To Performance
P. LLONTOP, M. MORALES-MASIS, MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
10.00 Break
10.30 CL-2:L20 Sustainable Thin-film Temperature Sensors on Shellac Coated Wood Substrates
F. MASOUMI, R. ZAMBONI, N. MÜNZENRIEDER, Faculty of Engineering, Free University of Bozen-Bolzano, Bozen-Bolzano, Italy; A. NIJKOOPS, Laboratory of Food Process Engineering, Wageningen University and Research, Wageningen, the Netherlands
10.50 CL-3:IL25 Oxide Electronics in Unconventional, Flexible and Natural Substrates
N. MÜNZENRIEDER, Faculty of Engineering, Free University of Bozen-Bolzano, Bolzano, Italy