Symposium CL
Development and Application of new Functional Transparent Conducting and Semiconducting Inorganic Materials
Session CL-1 Fundamentals
CL-1:IL01 Rutile GeO2 and GeSnO2 Alloys: A New Family of UV-Transparent Conducting Oxides
E. KIOUPAKIS, Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
CL-1:IL03 Properties of Hydrogen in In2O3
M. STAVOLA, A. VENZIE, W.B. FOWER, Lehigh University, Bethlehem, PA, USA; L.A. BOATNER, Oak Ridge National Laboratory, Oak Ridge, TN, USA
CL-1:IL04 Challenges and Prospects of Oxide Thin-Film Transistors for DRAM Applications
JUNGHWAN KIM, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
CL-1:IL05 Controlling Point Defects and Impurities in Ga2O3 and Related Alloys
C.G. VAN DE WALLE, Materials Department, University of California, Santa Barbara, CA, USA
CL-1:IL06 Probing the Electron-phonon Interactions at Superconducting LAO/STO Interfaces via Atomic-scale Vibrational EELS
WU ZHOU, School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
Session CL-2 Material design and device development
CL-2:IL07 Development of High-performance p-type Oxide Transistors
YONG-YOUNG NOH, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea
CL-2:IL08 Epitaxial SrSnO3 Films with Room-Temperature Mobility Exceeding 140 cm2/Vs
B. JALAN, Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA
CL-2:L11 Photophysics of Amorphous WO3 Thin Films as Transparent Conductive Oxides in the Near-IR
T. VIRGILI1, M. RUSSO2, A. VILLA2, H. CHEN2, A. TAGLIAFERRI2, A. CHIASERA3, A. CARLOTTO4, C. MANCARELLA5, D. DELLASEGA5, S.M. PIETRALUNGA1, 1CNR-IFN Milano, Milano, Italy; 2Dipartimento di Fisica, Politecnico di Milano, Milano, Italy; 3IFN – CNR, CSMFO Lab., Povo, Trento, Italy; 4Fondazione Bruno Kessler, Povo, Trento, Italy; 5Dipartimento di Energia, Politecnico di Milano, Milano, Italy;
CL-2:IL12 Dopant Control of CuI for High Performance Transparent p-Type Electronics
MYUNG-GIL KIM, School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyunggi-do, Republic of Korea
CL-2:IL13 Single Crystal Growth and Physical Properties of r-GeO2 in Comparison with Beta-Ga2O3 and Beta-(AlxGa1-x)2O3
Z. GALAZKA, Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany
CL-2:IL15 Ultra-High Mobility IGZO Thin-Film Transistors by Hydrogen-Defect Engineering
HYUN-SUK KIM, Dept. Energy and Materials Engineering, Dongguk University, Seoul, Republic of Korea
CL-2:IL16 Copper Iodide - A New Material for Active p-Type Thin Film Electronics
M. GRUNDMANN, Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Leipzig, Germany
CL-2:IL17 Engineered Transparent Conductive Oxides: From Structure To Performance
P. LLONTOP, M. MORALES-MASIS, MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
CL-2:IL18 Transparent Electrodes with Interplay of Conductivity and Transparency for Flexible Electronics
HYEOK KIM, University of Seoul, Seoul, South Korea
CL-2:L19 Fabrication of p-type Copper Oxides Doped by Nitrogen and Boron Using High-power Impulse Magnetron Sputtering
J. REZEK, N. KUMAR, J. KOLOROS, P. BAROCH, Department of Physics and NTIS - European Centre of Excellence, University of West Bohemia in Pilsen, Czech Republic
CL-2:L20 Sustainable Thin-film Temperature Sensors on Shellac Coated Wood Substrates
F. MASOUMI, R. ZAMBONI, N. MÜNZENRIEDER, Faculty of Engineering, Free University of Bozen-Bolzano, Bozen-Bolzano, Italy; A. NIJKOOPS, Laboratory of Food Process Engineering, Wageningen University and Research, Wageningen, the Netherlands
Session CL-3 Applications
CL-3:IL21 Fully Patterned Solution-based Zinc-tin Oxide Electronics
J. DEUERMEIER1, C. SILVA1, R. MARTINS1, L. MENDES2, J. VAZ3, G. MILANO4, M. ROSERO-REALPE5, E. FORTUNATO1, R. MARTINS1, E. CARLOS1, A. KIAZADEH1, 1CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, Caparica, Portugal; 2Instituto de Telecomunicações, Lisbon and Instituto Politécnico de Leiria, Leiria, Portugal; 3Instituto de Telecomunicações, Lisbon and Instituto Superior Técnico, Universidade de Lisboa, Lisbon, Portugal; 4Advanced Materials Metrology and Life Science Division, INRiM, Torino, Italy; 5Department of Applied Science and Technology, Politecnico di Torino, Torino, Italy
CL-3:IL22 Bioinspired Flexible Sensors for Human-machine Interfaces
HYUNHYUB KO, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
CL-3:IL23 β-Ga2O3 Epitaxial Growth and Device Technologies for Power and RF Electronics
M. HIGASHIWAKI, Osaka Metropolitan University, Sakai, Osaka, Japan; Y. KUMAGAI, Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan
CL-3:IL24 CVD Based Functionalized Parylene Layer as a Flexible Gate Dielectric for Oxide Transistors
KYUNG JIN LEE, Department of Chemical Engineering and Applied Chemistry, Chungnam National University, Daejeon, Republic of Korea
CL-3:IL25 Oxide Electronics in Unconventional, Flexible and Natural Substrates
N. MÜNZENRIEDER, Faculty of Engineering, Free University of Bozen-Bolzano, Bolzano, Italy
CL-3:IL26 Unlocking Sustainable Iontronics: Neuromorphic e-SKIN
DO HWAN KIM, Dept. of Chemical Engineering, Hanyang University, Seoul, Republic of Korea
CL-1:IL01 Rutile GeO2 and GeSnO2 Alloys: A New Family of UV-Transparent Conducting Oxides
E. KIOUPAKIS, Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
CL-1:IL03 Properties of Hydrogen in In2O3
M. STAVOLA, A. VENZIE, W.B. FOWER, Lehigh University, Bethlehem, PA, USA; L.A. BOATNER, Oak Ridge National Laboratory, Oak Ridge, TN, USA
CL-1:IL04 Challenges and Prospects of Oxide Thin-Film Transistors for DRAM Applications
JUNGHWAN KIM, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
CL-1:IL05 Controlling Point Defects and Impurities in Ga2O3 and Related Alloys
C.G. VAN DE WALLE, Materials Department, University of California, Santa Barbara, CA, USA
CL-1:IL06 Probing the Electron-phonon Interactions at Superconducting LAO/STO Interfaces via Atomic-scale Vibrational EELS
WU ZHOU, School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
Session CL-2 Material design and device development
CL-2:IL07 Development of High-performance p-type Oxide Transistors
YONG-YOUNG NOH, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea
CL-2:IL08 Epitaxial SrSnO3 Films with Room-Temperature Mobility Exceeding 140 cm2/Vs
B. JALAN, Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA
CL-2:L11 Photophysics of Amorphous WO3 Thin Films as Transparent Conductive Oxides in the Near-IR
T. VIRGILI1, M. RUSSO2, A. VILLA2, H. CHEN2, A. TAGLIAFERRI2, A. CHIASERA3, A. CARLOTTO4, C. MANCARELLA5, D. DELLASEGA5, S.M. PIETRALUNGA1, 1CNR-IFN Milano, Milano, Italy; 2Dipartimento di Fisica, Politecnico di Milano, Milano, Italy; 3IFN – CNR, CSMFO Lab., Povo, Trento, Italy; 4Fondazione Bruno Kessler, Povo, Trento, Italy; 5Dipartimento di Energia, Politecnico di Milano, Milano, Italy;
CL-2:IL12 Dopant Control of CuI for High Performance Transparent p-Type Electronics
MYUNG-GIL KIM, School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyunggi-do, Republic of Korea
CL-2:IL13 Single Crystal Growth and Physical Properties of r-GeO2 in Comparison with Beta-Ga2O3 and Beta-(AlxGa1-x)2O3
Z. GALAZKA, Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany
CL-2:IL15 Ultra-High Mobility IGZO Thin-Film Transistors by Hydrogen-Defect Engineering
HYUN-SUK KIM, Dept. Energy and Materials Engineering, Dongguk University, Seoul, Republic of Korea
CL-2:IL16 Copper Iodide - A New Material for Active p-Type Thin Film Electronics
M. GRUNDMANN, Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Leipzig, Germany
CL-2:IL17 Engineered Transparent Conductive Oxides: From Structure To Performance
P. LLONTOP, M. MORALES-MASIS, MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
CL-2:IL18 Transparent Electrodes with Interplay of Conductivity and Transparency for Flexible Electronics
HYEOK KIM, University of Seoul, Seoul, South Korea
CL-2:L19 Fabrication of p-type Copper Oxides Doped by Nitrogen and Boron Using High-power Impulse Magnetron Sputtering
J. REZEK, N. KUMAR, J. KOLOROS, P. BAROCH, Department of Physics and NTIS - European Centre of Excellence, University of West Bohemia in Pilsen, Czech Republic
CL-2:L20 Sustainable Thin-film Temperature Sensors on Shellac Coated Wood Substrates
F. MASOUMI, R. ZAMBONI, N. MÜNZENRIEDER, Faculty of Engineering, Free University of Bozen-Bolzano, Bozen-Bolzano, Italy; A. NIJKOOPS, Laboratory of Food Process Engineering, Wageningen University and Research, Wageningen, the Netherlands
Session CL-3 Applications
CL-3:IL21 Fully Patterned Solution-based Zinc-tin Oxide Electronics
J. DEUERMEIER1, C. SILVA1, R. MARTINS1, L. MENDES2, J. VAZ3, G. MILANO4, M. ROSERO-REALPE5, E. FORTUNATO1, R. MARTINS1, E. CARLOS1, A. KIAZADEH1, 1CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, Caparica, Portugal; 2Instituto de Telecomunicações, Lisbon and Instituto Politécnico de Leiria, Leiria, Portugal; 3Instituto de Telecomunicações, Lisbon and Instituto Superior Técnico, Universidade de Lisboa, Lisbon, Portugal; 4Advanced Materials Metrology and Life Science Division, INRiM, Torino, Italy; 5Department of Applied Science and Technology, Politecnico di Torino, Torino, Italy
CL-3:IL22 Bioinspired Flexible Sensors for Human-machine Interfaces
HYUNHYUB KO, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
CL-3:IL23 β-Ga2O3 Epitaxial Growth and Device Technologies for Power and RF Electronics
M. HIGASHIWAKI, Osaka Metropolitan University, Sakai, Osaka, Japan; Y. KUMAGAI, Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan
CL-3:IL24 CVD Based Functionalized Parylene Layer as a Flexible Gate Dielectric for Oxide Transistors
KYUNG JIN LEE, Department of Chemical Engineering and Applied Chemistry, Chungnam National University, Daejeon, Republic of Korea
CL-3:IL25 Oxide Electronics in Unconventional, Flexible and Natural Substrates
N. MÜNZENRIEDER, Faculty of Engineering, Free University of Bozen-Bolzano, Bolzano, Italy
CL-3:IL26 Unlocking Sustainable Iontronics: Neuromorphic e-SKIN
DO HWAN KIM, Dept. of Chemical Engineering, Hanyang University, Seoul, Republic of Korea