Symposium CL
Session CL-1 Fundamentals
CL-1:IL01 Rutile GeO2 and GeSnO2 Alloys: A New Family of UV-Transparent Conducting Oxides
E. KIOUPAKIS, Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
CL-1:IL02 Antimony (V) Oxides: a New Family of n-type TCOs
D.O. SCANLON, School of Chemistry, University of Birmingham, Edgbaston, Birmingham, UK
CL-1:IL03 Properties of Hydrogen in In2O3
M. STAVOLA, A. VENZIE, W.B. FOWER, Lehigh University, Bethlehem, PA, USA; L.A. BOATNER, Oak Ridge National Laboratory, Oak Ridge, TN, USA
CL-1:IL04 Challenges and Prospects of Oxide Thin-Film Transistors for DRAM Applications
JUNGHWAN KIM, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
CL-1:IL05 Controlling Point Defects and Impurities in Ga2O3 and Related Alloys
C.G. VAN DE WALLE, Materials Department, University of California, Santa Barbara, CA, USA
CL-1:IL06 Probing the Electron-phonon Interactions at Superconducting LAO/STO Interfaces via Atomic-scale Vibrational EELS
WU ZHOU, School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
Session CL-2 Material design and device development
CL-2:IL07 Development of High-performance p-type Oxide Transistors
YONG-YOUNG NOH, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea
CL-2:IL08 Epitaxial SrSnO3 Films with Room-Temperature Mobility Exceeding 140 cm2/Vs
B. JALAN, Professor, Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA
CL-2:IL09 Strategies for Mitigating Indium Use in Transparent Conductive Oxide Layers for Photovoltaics
CAN HAN1,2,3, ZHIBIN LIU1,2, XIONGHUI TAN1,2, PEI LI1,2, YINZHI CHEN1,2, WENJIE HE1,2, ZANHE YANG1,2, YONG ZHANG4, ZHONG YU4, PINGQI GAO1,2,3, 1School of Materials, Shenzhen Campus of Sun Yat-sen University, Guangming District, Shenzhen, Guangdong, P.R. China; 2Institute for Solar Energy Systems, Guangdong Engineering Technology Research Center for Sustainable Photovoltaic Technology and Equipment, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, P.R. China; 3Sichuan Yat-Sen Innovation Center of Photovoltaic Industry, Jinrun Industrial Park, Xuzhou District, Yibin, Sichuan, P.R. China; 4Shenzhen S.C New Energy Technology Corporation, Shenzhen, Guangdong, P.R. China
CL-2:IL10 Data-Driven Design of Transparent Conductors
A. GANOSE, Imperial College London, London, UK
CL-2:L11 Photophysics of Amorphous WO3 Thin Films as Transparent Conductive Oxides in the Near-IR
T. VIRGILI1, M. RUSSO2, A. VILLA2, H. CHEN2, A. TAGLIAFERRI2, A. CHIASERA3, A. CARLOTTO4, C. MANCARELLA5, D. DELLASEGA5, S.M. PIETRALUNGA1, 1CNR-IFN Milano, Milano, Italy; 2Dipartimento di Fisica, Politecnico di Milano, Milano, Italy; 3IFN – CNR, CSMFO Lab., Povo, Trento, Italy; 4Fondazione Bruno Kessler, Povo, Trento, Italy; 5Dipartimento di Energia, Politecnico di Milano, Milano, Italy;
CL-2:IL12 Dopant Control of CuI for High Performance Transparent p-Type Electronics
MYUNG-GIL KIM, School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyunggi-do, Republic of Korea
CL-2:IL13 Single Crystal Growth and Physical Properties of r-GeO2 in Comparison with Beta-Ga2O3 and Beta-(AlxGa1-x)2O3
Z. GALAZKA, Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany
CL-2:IL14 Zr-doped Indium Oxide Ultra Thin Films
M. MICALI1,2,5, A. LO MASTRO1,2, F. TRINGALI1,2, M. LEONARDI3,4, S. LOMBARDO3, G. BENGASI4, C. COLLETTI4, M. FOTI4, E. ALARCON LLADOÒ5,6, M. MIRITELLO2, G. FRANZÒ2, A. TERRASI1,2, 1Dipartimento di Fisica e Astronomia “Ettore Majorana”, Università di Catania, Catania, Italy; 2IMM-CNR, Sede Catania (Università) Catania, Italy; 3IMM-CNR Sede HQ, Catania, Italy; 43SUN, Catania, Italy; 5AMOLF Physics of Functional Matter, Amsterdam, the Netherlands; 6Van ‘t Hoff Institute for Molecular Sciences, University of Amsterdam, Amsterdam, the Netherlands
CL-2:IL15 Ultra-High Mobility IGZO Thin-Film Transistors by Hydrogen-Defect Engineering
HYUN-SUK KIM, Dept. Energy and Materials Engineering, Dongguk University, Seoul, Republic of Korea
CL-2:IL16 Copper Iodide - A New Material for Active p-Type Thin Film Electronics
M. GRUNDMANN, Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Leipzig, Germany
CL-2:IL17 Engineered Transparent Conductive Oxides: From Structure To Performance
P. LLONTOP, M. MORALES-MASIS, MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
CL-2:IL18 Transparent Electrodes with Interplay of Conductivity and Transparency for Flexible Electronics
HYEOK KIM, University of Seoul, Seoul, South Korea
CL-2:L19 Fabrication of p-type Copper Oxides Doped by Nitrogen and Boron Using High-power Impulse Magnetron Sputtering
J. REZEK, N. KUMAR, J. KOLOROS, P. BAROCH, Department of Physics and NTIS - European Centre of Excellence, University of West Bohemia in Pilsen, Czech Republic
CL-2:L20 Sustainable Thin-film Temperature Sensors on Shellac Coated Wood Substrates
F. MASOUMI, R. ZAMBONI, N. MÜNZENRIEDER, Faculty of Engineering, Free University of Bozen-Bolzano, Bozen-Bolzano, Italy; A. NIJKOOPS, Laboratory of Food Process Engineering, Wageningen University and Research, Wageningen, the Netherlands
Session CL-3 Applications
CL-3:IL21 Fully Patterned Solution-based Zinc-tin Oxide Electronics
J. DEUERMEIER1, C. SILVA1, R. MARTINS1, L. MENDES2, J. VAZ3, G. MILANO4, M. ROSERO-REALPE5, E. FORTUNATO1, R. MARTINS1, E. CARLOS1, A. KIAZADEH1, 1CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, Caparica, Portugal; 2Instituto de Telecomunicações, Lisbon and Instituto Politécnico de Leiria, Leiria, Portugal; 3Instituto de Telecomunicações, Lisbon and Instituto Superior Técnico, Universidade de Lisboa, Lisbon, Portugal; 4Advanced Materials Metrology and Life Science Division, INRiM, Torino, Italy; 5Department of Applied Science and Technology, Politecnico di Torino, Torino, Italy
CL-3:IL22 Bioinspired Flexible Sensors for Human-machine Interfaces
HYUNHYUB KO, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
CL-3:IL23 β-Ga2O3 Epitaxial Growth and Device Technologies for Power and RF Electronics
M. HIGASHIWAKI, Osaka Metropolitan University, Sakai, Osaka, Japan; Y. KUMAGAI, Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan
CL-3:IL24 CVD Based Functionalized Parylene Layer as a Flexible Gate Dielectric for Oxide Transistors
KYUNG JIN LEE, Department of Chemical Engineering and Applied Chemistry, Chungnam National University, Daejeon, Republic of Korea
CL-3:IL25 Oxide Electronics in Unconventional, Flexible and Natural Substrates
N. MÜNZENRIEDER, Faculty of Engineering, Free University of Bozen-Bolzano, Bolzano, Italy
CL-3:IL26 Unlocking Sustainable Iontronics: Neuromorphic e-SKIN
DO HWAN KIM, Dept. of Chemical Engineering, Hanyang University, Seoul, Republic of Korea
CL-1:IL01 Rutile GeO2 and GeSnO2 Alloys: A New Family of UV-Transparent Conducting Oxides
E. KIOUPAKIS, Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
CL-1:IL02 Antimony (V) Oxides: a New Family of n-type TCOs
D.O. SCANLON, School of Chemistry, University of Birmingham, Edgbaston, Birmingham, UK
CL-1:IL03 Properties of Hydrogen in In2O3
M. STAVOLA, A. VENZIE, W.B. FOWER, Lehigh University, Bethlehem, PA, USA; L.A. BOATNER, Oak Ridge National Laboratory, Oak Ridge, TN, USA
CL-1:IL04 Challenges and Prospects of Oxide Thin-Film Transistors for DRAM Applications
JUNGHWAN KIM, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
CL-1:IL05 Controlling Point Defects and Impurities in Ga2O3 and Related Alloys
C.G. VAN DE WALLE, Materials Department, University of California, Santa Barbara, CA, USA
CL-1:IL06 Probing the Electron-phonon Interactions at Superconducting LAO/STO Interfaces via Atomic-scale Vibrational EELS
WU ZHOU, School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
Session CL-2 Material design and device development
CL-2:IL07 Development of High-performance p-type Oxide Transistors
YONG-YOUNG NOH, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea
CL-2:IL08 Epitaxial SrSnO3 Films with Room-Temperature Mobility Exceeding 140 cm2/Vs
B. JALAN, Professor, Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA
CL-2:IL09 Strategies for Mitigating Indium Use in Transparent Conductive Oxide Layers for Photovoltaics
CAN HAN1,2,3, ZHIBIN LIU1,2, XIONGHUI TAN1,2, PEI LI1,2, YINZHI CHEN1,2, WENJIE HE1,2, ZANHE YANG1,2, YONG ZHANG4, ZHONG YU4, PINGQI GAO1,2,3, 1School of Materials, Shenzhen Campus of Sun Yat-sen University, Guangming District, Shenzhen, Guangdong, P.R. China; 2Institute for Solar Energy Systems, Guangdong Engineering Technology Research Center for Sustainable Photovoltaic Technology and Equipment, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, P.R. China; 3Sichuan Yat-Sen Innovation Center of Photovoltaic Industry, Jinrun Industrial Park, Xuzhou District, Yibin, Sichuan, P.R. China; 4Shenzhen S.C New Energy Technology Corporation, Shenzhen, Guangdong, P.R. China
CL-2:IL10 Data-Driven Design of Transparent Conductors
A. GANOSE, Imperial College London, London, UK
CL-2:L11 Photophysics of Amorphous WO3 Thin Films as Transparent Conductive Oxides in the Near-IR
T. VIRGILI1, M. RUSSO2, A. VILLA2, H. CHEN2, A. TAGLIAFERRI2, A. CHIASERA3, A. CARLOTTO4, C. MANCARELLA5, D. DELLASEGA5, S.M. PIETRALUNGA1, 1CNR-IFN Milano, Milano, Italy; 2Dipartimento di Fisica, Politecnico di Milano, Milano, Italy; 3IFN – CNR, CSMFO Lab., Povo, Trento, Italy; 4Fondazione Bruno Kessler, Povo, Trento, Italy; 5Dipartimento di Energia, Politecnico di Milano, Milano, Italy;
CL-2:IL12 Dopant Control of CuI for High Performance Transparent p-Type Electronics
MYUNG-GIL KIM, School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyunggi-do, Republic of Korea
CL-2:IL13 Single Crystal Growth and Physical Properties of r-GeO2 in Comparison with Beta-Ga2O3 and Beta-(AlxGa1-x)2O3
Z. GALAZKA, Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany
CL-2:IL14 Zr-doped Indium Oxide Ultra Thin Films
M. MICALI1,2,5, A. LO MASTRO1,2, F. TRINGALI1,2, M. LEONARDI3,4, S. LOMBARDO3, G. BENGASI4, C. COLLETTI4, M. FOTI4, E. ALARCON LLADOÒ5,6, M. MIRITELLO2, G. FRANZÒ2, A. TERRASI1,2, 1Dipartimento di Fisica e Astronomia “Ettore Majorana”, Università di Catania, Catania, Italy; 2IMM-CNR, Sede Catania (Università) Catania, Italy; 3IMM-CNR Sede HQ, Catania, Italy; 43SUN, Catania, Italy; 5AMOLF Physics of Functional Matter, Amsterdam, the Netherlands; 6Van ‘t Hoff Institute for Molecular Sciences, University of Amsterdam, Amsterdam, the Netherlands
CL-2:IL15 Ultra-High Mobility IGZO Thin-Film Transistors by Hydrogen-Defect Engineering
HYUN-SUK KIM, Dept. Energy and Materials Engineering, Dongguk University, Seoul, Republic of Korea
CL-2:IL16 Copper Iodide - A New Material for Active p-Type Thin Film Electronics
M. GRUNDMANN, Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Leipzig, Germany
CL-2:IL17 Engineered Transparent Conductive Oxides: From Structure To Performance
P. LLONTOP, M. MORALES-MASIS, MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
CL-2:IL18 Transparent Electrodes with Interplay of Conductivity and Transparency for Flexible Electronics
HYEOK KIM, University of Seoul, Seoul, South Korea
CL-2:L19 Fabrication of p-type Copper Oxides Doped by Nitrogen and Boron Using High-power Impulse Magnetron Sputtering
J. REZEK, N. KUMAR, J. KOLOROS, P. BAROCH, Department of Physics and NTIS - European Centre of Excellence, University of West Bohemia in Pilsen, Czech Republic
CL-2:L20 Sustainable Thin-film Temperature Sensors on Shellac Coated Wood Substrates
F. MASOUMI, R. ZAMBONI, N. MÜNZENRIEDER, Faculty of Engineering, Free University of Bozen-Bolzano, Bozen-Bolzano, Italy; A. NIJKOOPS, Laboratory of Food Process Engineering, Wageningen University and Research, Wageningen, the Netherlands
Session CL-3 Applications
CL-3:IL21 Fully Patterned Solution-based Zinc-tin Oxide Electronics
J. DEUERMEIER1, C. SILVA1, R. MARTINS1, L. MENDES2, J. VAZ3, G. MILANO4, M. ROSERO-REALPE5, E. FORTUNATO1, R. MARTINS1, E. CARLOS1, A. KIAZADEH1, 1CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, Caparica, Portugal; 2Instituto de Telecomunicações, Lisbon and Instituto Politécnico de Leiria, Leiria, Portugal; 3Instituto de Telecomunicações, Lisbon and Instituto Superior Técnico, Universidade de Lisboa, Lisbon, Portugal; 4Advanced Materials Metrology and Life Science Division, INRiM, Torino, Italy; 5Department of Applied Science and Technology, Politecnico di Torino, Torino, Italy
CL-3:IL22 Bioinspired Flexible Sensors for Human-machine Interfaces
HYUNHYUB KO, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
CL-3:IL23 β-Ga2O3 Epitaxial Growth and Device Technologies for Power and RF Electronics
M. HIGASHIWAKI, Osaka Metropolitan University, Sakai, Osaka, Japan; Y. KUMAGAI, Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan
CL-3:IL24 CVD Based Functionalized Parylene Layer as a Flexible Gate Dielectric for Oxide Transistors
KYUNG JIN LEE, Department of Chemical Engineering and Applied Chemistry, Chungnam National University, Daejeon, Republic of Korea
CL-3:IL25 Oxide Electronics in Unconventional, Flexible and Natural Substrates
N. MÜNZENRIEDER, Faculty of Engineering, Free University of Bozen-Bolzano, Bolzano, Italy
CL-3:IL26 Unlocking Sustainable Iontronics: Neuromorphic e-SKIN
DO HWAN KIM, Dept. of Chemical Engineering, Hanyang University, Seoul, Republic of Korea