IC-4 - 6th International Conference
Materials and Devices Technologies for Energy-efficient Neuromorphic and Unconventional Computing
Session IC-4.A Advances in memory and memristive technologies for computing: materials, devices, advanced characterization and modelling
IC-4.A:IL01 A Novel ePCM Cell for Edge AI Applications
M. BALDO, STMicroelectronics, Technology R&D, Agrate Brianza, Italy
IC-4.A:IL02 Phase-Change Memory for In-Memory Computing
G.S. SYED, IBM Research – Europe, Zurich, Switzerland
IC-4.A:IL03 Modelling of Phase Change Heterostructures for Neuromorphic Computing
R. MAZZARELLO, Department of Physics, Sapienza University of Rome, Rome, Italy
IC-4.A:L04 1D van der Waals Materials for Phase-Change Memory
YI SHUANG, YUJI SUTOU, Tohoku University, Sendai, Japan
IC-4.A:IL05 Flexoelectric Modulation of Electroresistance in 2D van der Waals Semiconductors
A. GRUVERMAN, University of Nebraska-Lincoln, Lincoln, NE, USA
IC-4.A:IL06 Magneto-ionic Synaptic Devices
L. HERRERA DIEZ, Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, Palaiseau, France
IC-4.A:L07 Spintronic Advantage of Molecular Spin-valves for Reinforcement Learning
C. BALDASSINI1,2, R. LICATA1,2, S. BOSE1,2, M. PISTOIA1,2, S. SANNA2, I. BERGENTI1, R. CECCHINI1, V.A. DEDIU1, L. GNOLI1, P. GRAZIOSI1, R. RAKSHIT1, S. ROY1, M. SINGH1, A. RIMINUCCI1, 1Institute for the Study of Nanostructured Materials (CNR-ISMN), Bologna, Italy; 2Department of Physics and Astronomy, University of Bologna, Bologna, Italy
IC-4.A:IL08 Strain Mediated Changes in Negative Differential Resistance in Manganite Thin Films
A. JAMAN, K.P. ROMPOTIS, I. BHADURI, T. BANERJEE, University of Groningen, Groningen, Netherlands
IC-4.A:IL09 Lead-Free Halide Perovskite Memristors for Neuromorphic Computing
C. MANDAR MHASKAR1, S. ROY CHAUDHURI2, A. ROY CHAUDHURI1, 1Materials Science Centre, Indian Institute of Technology Kharagpur, India; 2Department of Chemistry, Raja Narendralal Khan Women’s College, Midnapore, India
IC-4.A:IL10 Understanding Effects of Bottom Electrode Materials on Ferroelectricity in (Hf,Zr)O2 thin films
MIN HYUK PARK, Department of Materials Science and Engineering & Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea
IC-4.A:L11 Deterministic Intermediate Polarization States for Ferroelectric Synaptic Transistors: A TiN/ Hf0.5Zr0.5O2/TiN Model Study
N. SIZYKH, M. SPIRIDONOV, A. KHANAS, A. ZENKEVICH, Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region, Russia
IC-4.A:L12 The Effect of Chargeable Defects at Interfaces on the Functional Properties of M/HZO/M (M=TiN, W) Ferroelectric Memory Capacitors
N. SIZYKH, M. SPIRIDONOV, A. KHANAS, A. ZENKEVICH, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow region, Russia
IC-4.A:IL13 Yttrium Oxide: An Analog OxRAM Material
E. PIROS1, P. SCHREYER1, T. KIM1, Y. LI1, Y. DUAN1, A. ARZUMANOV1, L. MOLINA-LUNA2, J. GEHRUNGER3, L. MAYRHOFER3, C. HOCHBERGER3, T. OSTER4, K. HOFMANN4, F. AGUIRRE5,6, J. SUÑE5, E. MIRANDA5, L. ALFF1, 1ATFT Div., Inst. Mat. Sci., Technische Universität Darmstadt, Darmstadt, Germany; 2AEM Div., Inst. Mat. Sci., Technische Universität Darmstadt, Darmstadt, Germany; 3Computer Systems, Dep. El. Eng. and Inf. Techn., Technische Universität Darmstadt, Darmstadt, Germany; 4Integrated Electronic Systems Lab, Dep. El. Eng. and Inf. Techn., Technische Universität Darmstadt, Darmstadt, Germany; 5Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Spain; 6Intrinsic Semiconductor Technologies, Ltd., Buckinghamshire, UK
IC-4.A:IL14 Resistance Switching in SiOx Layers: From Demonstration to Commercialisation
A. MEHONIC, Department of Electronic & Electrical Engineering, University College London, London, UK
IC-4.A:IL15 Advances in Modelling of Memristive Devices
S. MENZEL, Forschungszentrum Jülich, Peter-Grünberg-Institut (PGI-7), Jülich, Germany
IC-4.A:L16 Towards atomistic understanding of digital and analog filamentary switching
L. ALFF, TU Darmstadt, Darmstadt, Germany
IC-4.A:L17 Resistive Switching Characteristics of Single, Bi, and Tri-layered Oxides in Memristive Devices
K. DORAI SWAMY REDDY1, E. PÉREZ1,2, CH. WENGER1,2, 1IHP – Leibniz Institute for High Performance Microelectronics, Frankfurt Oder, Brandenburg, Germany; 2Brandenburgische Technische Universität (BTU) Cottbus-Senftenberg, Cottbus, Germany
IC-4.A:IL18 How to Control the Behaviour and Functionalities of Nanoionic-enhanced Memristive Devices
I. VALOV, Research Centre Juelich, Wilhelm-Johnen-Str., Juelich, Germany; Institute for Electrochemistry and Energy Systems, BAS, Sofia, Bulgaria
IC-4.A:IL19 Disentangling Electronic and Ionic Behaviour in Redox-based Memristive Devices
J. HELLWIG, C. WITTBERG, D. SPITHOURIS, C. FUNCK, R. DITTMANN, P. GRÜNBERG, Institute 7, Forschungszentrum Jülich GmbH, Jülich, Germany
IC-4.A:IL20 Nano-Investigation of Energy Materials with Light
G. DI MARTINO, University of Oxford, Oxford, UK
IC-4.A:L21 N-Type Behavior from a P-Type Dopant? On Vacancies and Charge Compensation Mechanisms in HfO2
O. REHM1, L. BAUMGARTEN2, F. WUNDERWALD3, A. FUHRBERG1, P.M. DUERING1, A. GLOSKOVSKII4, C. SCHLUETER4, T. MIKOLAJICK3,5, U. SCHROEDER3, M. MUELLER1, 1Fachbereich Physik, Universität Konstanz, Konstanz, Germany; 2Forschungszentrum Jülich GmbH, Peter Grünberg Institut (PGI-6), Jülich, Germany; 3NaMLab gGmbH, Dresden, Germany; 4Deutsches Elektronen-Synchrotron, Hamburg, Germany; 5Technische Universitat Dresden, Dresden, Germany
IC-4.A:L22 Deconstructing the Interfacial Origins of a Multifunctional High-Mobility 2DEG
H. COX, D. RUBI, M. AHMADI, S. SANJAY, M. SAROTT, A.C. GARCÍA CASTRO, J. BAAS, K. CHERKAOUI, B. NOHEDA, University of Groningen, Groningen, Netherlands
IC-4.A:L23 Resistive Switching Devices Using Novel 2D Materials
M. GRÁCIO, H. TEIXEIRA, C. DIAS, J. VENTURA, IFIMUP, Departamento de Fisica e Astronomia, Faculdade de Ciências, Universidade do Porto, Porto, Portugal
IC-4.A:L24 Leveraging Liquid-based Memristors for Neuromorphic Computing
A.V. SILVA1, A.T.S.C. BRANDÃO2, C.M. PEREIRA2, J. VENTURA1, C. DIAS1, 1IFIMUP, Departamento de Física e Astronomia, Faculdade de Ciências, Universidade do Porto, Portugal; 2CIQUP, Departamento de Química e Bioquímica, Faculdade de Ciências, Universidade do Porto, Portugal
IC-4.A:IL25 Toward a Scalable Oscillatory Neural Network Architecture Based on VO₂ Neurons and Analog ReRAM Coupling Elements
V. BRAGAGLIA, IBM Research - Zurich, Rüschlikon, Switzerland
IC-4.A:L26 Ultra High Frequency Oscillators with Nanoscale VO2 Memristors
Z. POLLNER, T.N. TÖRÖK, L. PÓSA, S.W. SCHMID, Z. BALOGH, A. HALBRITTER, Department of Physics, Budapest University of Technology and Economics, Hungary; M. CSONTOS, J. LEUTHOLD, Institute of Electromagnetic Fields, ETH Zurich, Switzerland; A. BÜKKFEJES, Emerson - Test and Measurement (NI), Hungary; H. KIM, A. PIQUÉ, Naval Research Laboratory, USA; J. VOLK, Institute of Technical Physics and Materials Science, Centre for Energy Research, Hungary
IC-4.A:L27 Toward GHz Operation of Oscillating Neural Networks
Z. POLLNER1,2, T.N. TÖRÖK1,3, L. PÓSA1, Z. BALOGH1,2, A. HALBRITTER1,2, J. VOLK3, J. LEUTHOLD4, M. CSONTOS4, 1Department of Physics, Budapest University of Technology and Economics, Budapest, Hungary; 2HUN-REN–BME Condensed Matter Research Group, Budapest University of Technology and Economics, Budapest, Hungary; 3Institute of Technical Physics and Materials Science, Centre for Energy Research, Budapest, Hungary; 4Institute of Electromagnetic Fields, ETH Zurich, Zürich, Switzerland
IC-4.A:IL28 Realizing Neuron-synapse Integration with Vanadium Oxide Based Memristors for Multiple Neuronal Spiking Functionalities
JEN-SUE CHEN, ZIH-SIAO LIAO, SHENG-JIE HONG, LI-CHUNG SHIH, SHUAI-MING CHEN, KAI-SHIN HSU, CHI-CHEIN CHEN, Department of Materials Science and Engineering, National Cheng Kung University Tainan, Taiwan
IC-4.A:L29 Cryogenic Endurance of HfO₂-Based 1T1R RRAM for Quantum-Compatible Memory
E. PEREZ-BOSCH QUESADA, A. MISTRONI, K.D.S. REDDY, F. REICHMANN, C. WENGER, E. PEREZ, IHP - Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany; A. CANTUDO, J.B. ROLDAN, Department of Electronics and Computer Technology, University of Granada, Granada, Spain; R. JIA, Micro- and Nanosystems Technology, Technical University of Munich, Munich, Germany; H. CASTAN, S. DUEÑAS, Department of Electronics, University of Valladolid, Valladolid, Spain; C. WENGER, E. PEREZ, BTU Cottbus-Senftenberg, Cottbus, Germany
IC-4.A:L30 Impact of NMOS Transfer Characteristics on the Electrical Behavior of 1T1R Structure
T. RIZZI, M. UHLMANN, K.D.S. REDDY, E. P-B. QUESADA, C. WENGER, E. PÉREZ, IHP - Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany; T. ZANOTTI, F. M. PUGLISI, Dipartimento di Ingegneria “Enzo Ferrari” Università di Modena e Reggio Emilia, Modena, Italy; C. WENGER, E. PÉREZ, BTU Cottbus-Senftenberg, Cottbus, Germany
IC-4.A:L31 Effect of Residual Ion Drift during Programming of CMOS-Integrated Nanoscale HfO2-based Memristive Devices
S. HOFFMANN-EIFERT, O. ARTNER, F. CUEPPERS, SEOKKI SON, XIAOHUA LIU, S. WIEFELS, S. MENZEL, Forschungszentrum Jülich GmbH, Peter Grünberg Institute for Electronic Materials (PGI 7), Jülich, Germany
IC-4.A:L32 Comprehensive Noise Diagnostics of Memristive Systems
Z. BALOGH, B. SÁNTA, A. HALBRITTER, Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Budapest, Hungary and MTA-BME Condensed Matter Research Group, Budapest, Hungary; T.N. TÖRÖK, Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Budapest, Hungary and Institute of Technical Physics and Materials Science, HUN-REN Centre for Energy Research, Budapest, Hungary; S.W. SCHMID, Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Budapest, Hungary and Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany
Session IC-4.B1 Memristive devices for neuromorphic and unconventional computing: devices, modelling, applications
IC-4.B1:IL33 Design and Implementation of Memristive Locally Coupled Sensor-processor Systems: Recent Results
R. TETZLAFF1, A. DEMIRKOL1, V. NTINAS2, C. YU1, D. PROUSALIS1, I. MESSARIS1, A. ASCOLI3, LEON CHUA4, 1Institute of Circuits and Systems, TU Dresden, Dresden, Germany; 2Department of Electronic Systems, Aalborg University, Denmark; 3Department of Electronics and Telecommunications of Politecnico di Torino, Turin, Italy; 4Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, CA, USA
IC-4.B1:IL34 Utilizing Emerging Memory Technologies to Solve Optimization Problems
D. STRUKOV, UC Santa Barbara, ECE Department, Santa Barbara, CA, USA
IC-4.B1:L35 Data-Driven Flux-Controlled Memristor Model for Neuromorphic Applications
K. NIKIRUY, I. PETRENYOV, A. SHKURMANOV, M. ZIEGLER, Chair of Energy Materials and Devices, Department of Materials Science, Kiel University, Kiel, Germany; J. SCHNEEGAß, T. IVANOV, Department of Electrical Engineering and Information Technology, Micro- and Nanoelectronic Systems, TU Ilmenau, Ilmenau, Germany; D. ROSSETTI, F. CORINTO, A. ASCOLI, Department of Electronics and Telecommunications, Politecnico di Torino, Turin, Italy; A.S. DEMIRKOL, R. TETZLAFF, Faculty of Electrical and Computer Engineering, Institute of Circuits and Systems, TU Dresden, Dresden, Germany
IC-4.B1:L36 Logistic Map Circuit for Chaotic Sequence Generation in DNA-based Image Encryption
R. CAVAZZANA, S. HALIUK, A. ASCOLI, D. VOVCHUK, T. SALGALS, V. BOBROVS, F. PARESCHI, F. CORINTO, J. SECCO, Department of Electronics and Telecommunications, Politecnico di Torino, Turin, Italy; Institute of Telecommunications, Riga Technical University, Riga, Latvia; Department of Radio Engineering and Information Security, Yuriy Fedkovych Chernivtsi National University, Chernivtsi, Ukraine
IC-4.B1:L37 High Frequency Characterization and Modeling of CMOS Integrated RRAM Devices
M. UHLMANN, S. DILEK, M. INAC, E.P.-B. QUESADA, R. THILEEBAN, E. PÉREZ, F. KORNDÖRFER, P. OSTROVSKYY, C. CARTA, G. KAHMEN, C. WENGER, A. MALIGNAGGI, IHP – Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany; E. PÉREZ, C. WENGER, G. KAHMEN, BTU Cottbus-Senftenberg, Cottbus, Germany; C. CARTA, TU Berlin, Berlin, Germany
IC-4.B1:L38 Neural Information Processing and Time-Series Prediction with Only Two Dynamical Memristors
D. MOLNÁR1,2, T.N. TÖRÖK1,3, J. VOLK JR.1, R. KÖVECS1, L. PÓSA1,3, P. BALÁZS1, G. MOLNÁR3, N. JIMENEZ OLALLA4, Z. BALOGH1,2, J. VOLK3, J. LEUTHOLD4, M. CSONTOS4, A. HALBRITTER1,2, 1Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Budapest, Hungary; 2ELKH-BME Condensed Matter Research Group, Budapest, Hungary; 3Institute of Technical Physics and Materials Science, Centre for Energy Research, Budapest, Hungary; 4Institute of Electromagnetic Fields, ETH Zurich, Zurich, Switzerland
IC-4.B1:IL39 Receptron Hardware Platform for Real Time Learning and Classification
B. PAROLI, S. RADICE, F. BORGHI, M.A.C. POTENZA, P. MILANI, CIMAINA—Interdisciplinary Centre for Nanostructured Materials and Interfaces, Department of Physics “Aldo Pontremoli”, Università degli Studi di Milano, Milano, Italy
IC-4.B1:IL40 Resistive Switching Devices at the Crossroad of RF Switching and Flexible Electronics
A. KIAZADEH, T. MINGATES, J. DEUERMEIER, M. PEREIRA, A.G. KELLY, E. CARLOS, E. FORTUNATO, CENIMAT|i3N, Faculty of Science and Technology, NOVA University Lisbon, Caparica, Portugal
IC-4.B1:IL41 Memristors with Organic Self-Assembled Monolayers
P. KIRSCH, TU Darmstadt, Darmstadt, Germany; and Merck Electronics KGaA, Darmstadt, Germany
IC-4.B1:IL42 Molecular Neuromorphic Building Blocks for Artificial Intelligence
S. GOSWAMI, Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, India
IC-4.B1:L43 From Nature to Neuromorphic: Harnessing Nigella Melanin as a Green Material for Artificial Synapses
M. AMBRICO1, G. LUPIDI2, Gb. LUPIDI4, P.F. AMBRICO1, L. VALGIMIGLI3, S. MATTIELLO4, D. ACETO1, A. GUZZINI4, A. GRIGORYEVA5, A. DE STRADIS6, R. GUNNELLA4, 1CNR-ISTP - Bari Branch, Bari, Italy; 2School of Pharmaceutical Sciences and Health Products, University of Camerino, Camerino (Italy); 3Department of Chemistry “G. Ciamician”, University of Bologna, Bologna, Italy; 4International School Advanced Studies, University of Camerino, Camerino, Italy; 5Tecnopolo di Rimini, Rimini, Italy; 6CNR-IPSP, Bari Branch, Bari, Italy
Session IC-4.B2 Diffusive and volatile memristors
IC-4.B2:IL44 Diffusive Memristor Devices and Circuits for Neuromorphic Computing
QIANGFEI XIA, University of Massachusetts, Amherst, MA, USA
IC-4.B2:IL45 Investigation and Engineering of Switching and Relaxation Dynamics of Ag-based Diffusive Memristors
S. BRIVIO, M. DUTTA, A. BELLINGERI, F. VACCARO, S. SPIGA, CNR - IMM, Unit of Agrate Brianza, Agrate Brianza, Italy
IC-4.B2:L46 Effect of Al2O3 Layer Thickness and of Programming Parameters on Cumulative and Intrinsic Retention in Ag/Al2O3/SiOx/Pt Volatile Memristors
A. BELLINGERI1,2, S. BRIVIO1, S. SPIGA1, 1CNR - IMM, Unit of Agrate Brianza, Italy; 2Università degli Studi di Milano, Department of Physics “Aldo Pontremoli”, Italy
IC-4.B2:L47 Self-aligned Single-Nanoparticle Ag Memristors
M. FISCHER-BUTESHEVA, D. EGLIN, M. LEWERENZ, G.-L. FRANCHINI, E. PASSERINI, N. JIMENEZ OLALLA, K. SRIKRISHNAPRABHU, M. STECHER, R. GISLER, Y. FEDORYSHYN, M. CSONTOS, J. LEUTHOLD, Institute of Electromagnetic Fields, ETH Zurich, Zurich, Switzerlan
IC-4.B2:L48 Investigation of the Transient Behaviour of Volatile Electrochemical Metallization Cells Operated in Integrate-and-fire Neuron Circuits
J. RASBACH, NINGYUAN MA, R. WALIED AHMAD, S. MENZEL, S. HOFFMANN-EIFERT, Forschungszentrum Jülich GmbH, Peter Grünberg Institut 7, Jülich, Germany
IC-4.B2:L49 Volatile Amorphous-SrTiO3 Devices with Tunable Decay Time for Event-based Sensing
D. SPITHOURIS, J. HELLWIG, C. WITTBERG, R. DITTMANN, PGI-7, Forschungszentrum Jülich, NRW, Germany; H. GREATOREX, E. CHICCA, BICS Lab, Zernike Institute for Advanced Materials, University of Groningen, The Netherlands; CogniGron, University of Groningen, The Netherlands
IC-4.B2:L50 Three-Terminal Memristor with Tunable Volatility and Set-Voltage
K. SRIKRISHNAPRABHU, M. LEWERENZ, M. FISCHER-BUTESHEVA, E. PASSERINI, A. SCHNEUWLY, N.J. OLALLA, R. GISLER, M.A. STECHER, Institute of Electromagnetic Fields, ETH Zurich, SWITZERLAND; A. EMBORAS, M. LUISIER, Integrated Systems Laboratory, ETH Zurich, SWITZERLAND; M. CSONTOS, J. LEUTHOLD, Institute of Electromagnetic Fields, ETH Zurich, Switzerland
Session IC-4.C Brain inspired hardware and computing
IC-4.C:IL51 Modeling the Brain as a Complex Adaptive System: Computational Approaches to Information Transfer in Neuronal Circuits
D. GANDOLFI, University of Modena and Reggio Emilia, Modena, Italy
IC-4.C:IL52 Self-organizing Neuromorphic Networks as Dynamical Systems for Computing
G. MILANO1, C. RICCIARDI2, E. MIRANDA3, 1Advanced Materials Metrology and Life Science Division, INRiM (Istituto Nazionale di Ricerca Metrologica), Italy; 2Department of Applied Science and Technology, Politecnico di Torino, Italy; 3Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), Cerdanyola del Vallès, Spain
IC-4.C:L53 Reversible Self-assembly of Neuromorphic Particle Networks
S. VAN KESTEREN1, L. BÉGON-LOURS1, S. SACANNA2, 1ETH Zurich, Dept. of Information Technology and Electrical Engineering, Zurich, Switzerland; 2New York University, Department of Chemistry, New York, NY, USA
IC-4.C:L54 Programmable Connectivity of Self-assembled Materials for Algebraic and Classification Tasks on Edge Systems
F. BORGHI, D. DECASTRI, F. PROFUMO, P. MILANI, Physics Department and CIMaINa, University of Milano, Milano, Italy
IC-4.C:L55 Dense Ag/PVP-based Nanowire Networks for Brain-like Electronics
J. DIAZ SCHNEIDER, C. QUINTEROS, E. MARTÍNEZ, P. LEVY, Centro Atómico Bariloche, Comisión Nacional de Energía Atómica (CNEA), S. C. de Bariloche, Río Negro, Argentina; Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina; Instituto de Nanociencia y Nanotecnología (CNEA + CONICET), S.C. de Bariloche, Río Negro, Argentina ICIFI, (UNSAM-CONICET), San Martín, Argentina
IC-4.C:L56 Neurodynamic Circuits for Cochlear Implants and High-frequency Spike Encoding
T.N. TÖRÖK, M. HIZÓ, R. KÖVECS, ZS. POLLNER, A. HALBRITTER, Department of Physics, Budapest University of Technology and Economics, Budapest, Hungary; F. BRAUN, T. ZEFFER, N.Q. KHÁNH, L. PÓSA, J. VOLK, Institute of Technical Physics and Materials Science, HUN-REN Centre for Energy Research, Budapest, Hungary
IC-4.C:L57 High Frequency Neural Information Processing with Dynamical Memristors
D. MOLNAR, T.N. TÖRÖK, J. VOLK JR., A. HALBRITTER, Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Budapest, Hungary
IC-4.C:IL58 Ionic Nanoarchitectonics for Neuromorphic Computing
KAZUYA TERABE, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, Japan
IC-4.C:IL59 Electrochemical Ionic Synapses for Energy-Efficient Brain-Inspired Computing
BILGE YILDIZ, Massachusetts Institute of Technology, Cambridge, MA, USA
IC-4.C:IL60 Electrochemical Random Access Memory - Self Heating Opens a New Frontier
E.J. FULLER, Sandia National Laboratories, Livermore, CA, USA
IC-4.C:IL61 In-Materio Reservoir Computing Utilizing Spatiotemporal Dynamics of Ion, Electron, and Spin
T. TSUCHIYA, D. NISHIOKA, W. NAMIKI, R. IGUCHI, Y. SHINGAYA, K. TERABE, National Institute for Materials Science, Tsukuba, Ibaraki, Japan
IC-4.C:L62 Energy-Efficient Programming of First-Order Memristive Devices
V.A. SLIPKO1, A. ASCOLI2, F. CORINTO2, Y.V. PERSHIN3, 1Institute of Physics, Opole University, Opole, Poland; 2Department of Electronics and Telecommunications Politecnico di Torino, Turin, Italy; 3Department of Physics and Astronomy, University of South Carolina, Columbia, SC, USA
IC-4.A:IL01 A Novel ePCM Cell for Edge AI Applications
M. BALDO, STMicroelectronics, Technology R&D, Agrate Brianza, Italy
IC-4.A:IL02 Phase-Change Memory for In-Memory Computing
G.S. SYED, IBM Research – Europe, Zurich, Switzerland
IC-4.A:IL03 Modelling of Phase Change Heterostructures for Neuromorphic Computing
R. MAZZARELLO, Department of Physics, Sapienza University of Rome, Rome, Italy
IC-4.A:L04 1D van der Waals Materials for Phase-Change Memory
YI SHUANG, YUJI SUTOU, Tohoku University, Sendai, Japan
IC-4.A:IL05 Flexoelectric Modulation of Electroresistance in 2D van der Waals Semiconductors
A. GRUVERMAN, University of Nebraska-Lincoln, Lincoln, NE, USA
IC-4.A:IL06 Magneto-ionic Synaptic Devices
L. HERRERA DIEZ, Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, Palaiseau, France
IC-4.A:L07 Spintronic Advantage of Molecular Spin-valves for Reinforcement Learning
C. BALDASSINI1,2, R. LICATA1,2, S. BOSE1,2, M. PISTOIA1,2, S. SANNA2, I. BERGENTI1, R. CECCHINI1, V.A. DEDIU1, L. GNOLI1, P. GRAZIOSI1, R. RAKSHIT1, S. ROY1, M. SINGH1, A. RIMINUCCI1, 1Institute for the Study of Nanostructured Materials (CNR-ISMN), Bologna, Italy; 2Department of Physics and Astronomy, University of Bologna, Bologna, Italy
IC-4.A:IL08 Strain Mediated Changes in Negative Differential Resistance in Manganite Thin Films
A. JAMAN, K.P. ROMPOTIS, I. BHADURI, T. BANERJEE, University of Groningen, Groningen, Netherlands
IC-4.A:IL09 Lead-Free Halide Perovskite Memristors for Neuromorphic Computing
C. MANDAR MHASKAR1, S. ROY CHAUDHURI2, A. ROY CHAUDHURI1, 1Materials Science Centre, Indian Institute of Technology Kharagpur, India; 2Department of Chemistry, Raja Narendralal Khan Women’s College, Midnapore, India
IC-4.A:IL10 Understanding Effects of Bottom Electrode Materials on Ferroelectricity in (Hf,Zr)O2 thin films
MIN HYUK PARK, Department of Materials Science and Engineering & Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea
IC-4.A:L11 Deterministic Intermediate Polarization States for Ferroelectric Synaptic Transistors: A TiN/ Hf0.5Zr0.5O2/TiN Model Study
N. SIZYKH, M. SPIRIDONOV, A. KHANAS, A. ZENKEVICH, Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region, Russia
IC-4.A:L12 The Effect of Chargeable Defects at Interfaces on the Functional Properties of M/HZO/M (M=TiN, W) Ferroelectric Memory Capacitors
N. SIZYKH, M. SPIRIDONOV, A. KHANAS, A. ZENKEVICH, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow region, Russia
IC-4.A:IL13 Yttrium Oxide: An Analog OxRAM Material
E. PIROS1, P. SCHREYER1, T. KIM1, Y. LI1, Y. DUAN1, A. ARZUMANOV1, L. MOLINA-LUNA2, J. GEHRUNGER3, L. MAYRHOFER3, C. HOCHBERGER3, T. OSTER4, K. HOFMANN4, F. AGUIRRE5,6, J. SUÑE5, E. MIRANDA5, L. ALFF1, 1ATFT Div., Inst. Mat. Sci., Technische Universität Darmstadt, Darmstadt, Germany; 2AEM Div., Inst. Mat. Sci., Technische Universität Darmstadt, Darmstadt, Germany; 3Computer Systems, Dep. El. Eng. and Inf. Techn., Technische Universität Darmstadt, Darmstadt, Germany; 4Integrated Electronic Systems Lab, Dep. El. Eng. and Inf. Techn., Technische Universität Darmstadt, Darmstadt, Germany; 5Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Spain; 6Intrinsic Semiconductor Technologies, Ltd., Buckinghamshire, UK
IC-4.A:IL14 Resistance Switching in SiOx Layers: From Demonstration to Commercialisation
A. MEHONIC, Department of Electronic & Electrical Engineering, University College London, London, UK
IC-4.A:IL15 Advances in Modelling of Memristive Devices
S. MENZEL, Forschungszentrum Jülich, Peter-Grünberg-Institut (PGI-7), Jülich, Germany
IC-4.A:L16 Towards atomistic understanding of digital and analog filamentary switching
L. ALFF, TU Darmstadt, Darmstadt, Germany
IC-4.A:L17 Resistive Switching Characteristics of Single, Bi, and Tri-layered Oxides in Memristive Devices
K. DORAI SWAMY REDDY1, E. PÉREZ1,2, CH. WENGER1,2, 1IHP – Leibniz Institute for High Performance Microelectronics, Frankfurt Oder, Brandenburg, Germany; 2Brandenburgische Technische Universität (BTU) Cottbus-Senftenberg, Cottbus, Germany
IC-4.A:IL18 How to Control the Behaviour and Functionalities of Nanoionic-enhanced Memristive Devices
I. VALOV, Research Centre Juelich, Wilhelm-Johnen-Str., Juelich, Germany; Institute for Electrochemistry and Energy Systems, BAS, Sofia, Bulgaria
IC-4.A:IL19 Disentangling Electronic and Ionic Behaviour in Redox-based Memristive Devices
J. HELLWIG, C. WITTBERG, D. SPITHOURIS, C. FUNCK, R. DITTMANN, P. GRÜNBERG, Institute 7, Forschungszentrum Jülich GmbH, Jülich, Germany
IC-4.A:IL20 Nano-Investigation of Energy Materials with Light
G. DI MARTINO, University of Oxford, Oxford, UK
IC-4.A:L21 N-Type Behavior from a P-Type Dopant? On Vacancies and Charge Compensation Mechanisms in HfO2
O. REHM1, L. BAUMGARTEN2, F. WUNDERWALD3, A. FUHRBERG1, P.M. DUERING1, A. GLOSKOVSKII4, C. SCHLUETER4, T. MIKOLAJICK3,5, U. SCHROEDER3, M. MUELLER1, 1Fachbereich Physik, Universität Konstanz, Konstanz, Germany; 2Forschungszentrum Jülich GmbH, Peter Grünberg Institut (PGI-6), Jülich, Germany; 3NaMLab gGmbH, Dresden, Germany; 4Deutsches Elektronen-Synchrotron, Hamburg, Germany; 5Technische Universitat Dresden, Dresden, Germany
IC-4.A:L22 Deconstructing the Interfacial Origins of a Multifunctional High-Mobility 2DEG
H. COX, D. RUBI, M. AHMADI, S. SANJAY, M. SAROTT, A.C. GARCÍA CASTRO, J. BAAS, K. CHERKAOUI, B. NOHEDA, University of Groningen, Groningen, Netherlands
IC-4.A:L23 Resistive Switching Devices Using Novel 2D Materials
M. GRÁCIO, H. TEIXEIRA, C. DIAS, J. VENTURA, IFIMUP, Departamento de Fisica e Astronomia, Faculdade de Ciências, Universidade do Porto, Porto, Portugal
IC-4.A:L24 Leveraging Liquid-based Memristors for Neuromorphic Computing
A.V. SILVA1, A.T.S.C. BRANDÃO2, C.M. PEREIRA2, J. VENTURA1, C. DIAS1, 1IFIMUP, Departamento de Física e Astronomia, Faculdade de Ciências, Universidade do Porto, Portugal; 2CIQUP, Departamento de Química e Bioquímica, Faculdade de Ciências, Universidade do Porto, Portugal
IC-4.A:IL25 Toward a Scalable Oscillatory Neural Network Architecture Based on VO₂ Neurons and Analog ReRAM Coupling Elements
V. BRAGAGLIA, IBM Research - Zurich, Rüschlikon, Switzerland
IC-4.A:L26 Ultra High Frequency Oscillators with Nanoscale VO2 Memristors
Z. POLLNER, T.N. TÖRÖK, L. PÓSA, S.W. SCHMID, Z. BALOGH, A. HALBRITTER, Department of Physics, Budapest University of Technology and Economics, Hungary; M. CSONTOS, J. LEUTHOLD, Institute of Electromagnetic Fields, ETH Zurich, Switzerland; A. BÜKKFEJES, Emerson - Test and Measurement (NI), Hungary; H. KIM, A. PIQUÉ, Naval Research Laboratory, USA; J. VOLK, Institute of Technical Physics and Materials Science, Centre for Energy Research, Hungary
IC-4.A:L27 Toward GHz Operation of Oscillating Neural Networks
Z. POLLNER1,2, T.N. TÖRÖK1,3, L. PÓSA1, Z. BALOGH1,2, A. HALBRITTER1,2, J. VOLK3, J. LEUTHOLD4, M. CSONTOS4, 1Department of Physics, Budapest University of Technology and Economics, Budapest, Hungary; 2HUN-REN–BME Condensed Matter Research Group, Budapest University of Technology and Economics, Budapest, Hungary; 3Institute of Technical Physics and Materials Science, Centre for Energy Research, Budapest, Hungary; 4Institute of Electromagnetic Fields, ETH Zurich, Zürich, Switzerland
IC-4.A:IL28 Realizing Neuron-synapse Integration with Vanadium Oxide Based Memristors for Multiple Neuronal Spiking Functionalities
JEN-SUE CHEN, ZIH-SIAO LIAO, SHENG-JIE HONG, LI-CHUNG SHIH, SHUAI-MING CHEN, KAI-SHIN HSU, CHI-CHEIN CHEN, Department of Materials Science and Engineering, National Cheng Kung University Tainan, Taiwan
IC-4.A:L29 Cryogenic Endurance of HfO₂-Based 1T1R RRAM for Quantum-Compatible Memory
E. PEREZ-BOSCH QUESADA, A. MISTRONI, K.D.S. REDDY, F. REICHMANN, C. WENGER, E. PEREZ, IHP - Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany; A. CANTUDO, J.B. ROLDAN, Department of Electronics and Computer Technology, University of Granada, Granada, Spain; R. JIA, Micro- and Nanosystems Technology, Technical University of Munich, Munich, Germany; H. CASTAN, S. DUEÑAS, Department of Electronics, University of Valladolid, Valladolid, Spain; C. WENGER, E. PEREZ, BTU Cottbus-Senftenberg, Cottbus, Germany
IC-4.A:L30 Impact of NMOS Transfer Characteristics on the Electrical Behavior of 1T1R Structure
T. RIZZI, M. UHLMANN, K.D.S. REDDY, E. P-B. QUESADA, C. WENGER, E. PÉREZ, IHP - Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany; T. ZANOTTI, F. M. PUGLISI, Dipartimento di Ingegneria “Enzo Ferrari” Università di Modena e Reggio Emilia, Modena, Italy; C. WENGER, E. PÉREZ, BTU Cottbus-Senftenberg, Cottbus, Germany
IC-4.A:L31 Effect of Residual Ion Drift during Programming of CMOS-Integrated Nanoscale HfO2-based Memristive Devices
S. HOFFMANN-EIFERT, O. ARTNER, F. CUEPPERS, SEOKKI SON, XIAOHUA LIU, S. WIEFELS, S. MENZEL, Forschungszentrum Jülich GmbH, Peter Grünberg Institute for Electronic Materials (PGI 7), Jülich, Germany
IC-4.A:L32 Comprehensive Noise Diagnostics of Memristive Systems
Z. BALOGH, B. SÁNTA, A. HALBRITTER, Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Budapest, Hungary and MTA-BME Condensed Matter Research Group, Budapest, Hungary; T.N. TÖRÖK, Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Budapest, Hungary and Institute of Technical Physics and Materials Science, HUN-REN Centre for Energy Research, Budapest, Hungary; S.W. SCHMID, Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Budapest, Hungary and Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany
Session IC-4.B1 Memristive devices for neuromorphic and unconventional computing: devices, modelling, applications
IC-4.B1:IL33 Design and Implementation of Memristive Locally Coupled Sensor-processor Systems: Recent Results
R. TETZLAFF1, A. DEMIRKOL1, V. NTINAS2, C. YU1, D. PROUSALIS1, I. MESSARIS1, A. ASCOLI3, LEON CHUA4, 1Institute of Circuits and Systems, TU Dresden, Dresden, Germany; 2Department of Electronic Systems, Aalborg University, Denmark; 3Department of Electronics and Telecommunications of Politecnico di Torino, Turin, Italy; 4Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, CA, USA
IC-4.B1:IL34 Utilizing Emerging Memory Technologies to Solve Optimization Problems
D. STRUKOV, UC Santa Barbara, ECE Department, Santa Barbara, CA, USA
IC-4.B1:L35 Data-Driven Flux-Controlled Memristor Model for Neuromorphic Applications
K. NIKIRUY, I. PETRENYOV, A. SHKURMANOV, M. ZIEGLER, Chair of Energy Materials and Devices, Department of Materials Science, Kiel University, Kiel, Germany; J. SCHNEEGAß, T. IVANOV, Department of Electrical Engineering and Information Technology, Micro- and Nanoelectronic Systems, TU Ilmenau, Ilmenau, Germany; D. ROSSETTI, F. CORINTO, A. ASCOLI, Department of Electronics and Telecommunications, Politecnico di Torino, Turin, Italy; A.S. DEMIRKOL, R. TETZLAFF, Faculty of Electrical and Computer Engineering, Institute of Circuits and Systems, TU Dresden, Dresden, Germany
IC-4.B1:L36 Logistic Map Circuit for Chaotic Sequence Generation in DNA-based Image Encryption
R. CAVAZZANA, S. HALIUK, A. ASCOLI, D. VOVCHUK, T. SALGALS, V. BOBROVS, F. PARESCHI, F. CORINTO, J. SECCO, Department of Electronics and Telecommunications, Politecnico di Torino, Turin, Italy; Institute of Telecommunications, Riga Technical University, Riga, Latvia; Department of Radio Engineering and Information Security, Yuriy Fedkovych Chernivtsi National University, Chernivtsi, Ukraine
IC-4.B1:L37 High Frequency Characterization and Modeling of CMOS Integrated RRAM Devices
M. UHLMANN, S. DILEK, M. INAC, E.P.-B. QUESADA, R. THILEEBAN, E. PÉREZ, F. KORNDÖRFER, P. OSTROVSKYY, C. CARTA, G. KAHMEN, C. WENGER, A. MALIGNAGGI, IHP – Leibniz Institute for High Performance Microelectronics, Frankfurt (Oder), Germany; E. PÉREZ, C. WENGER, G. KAHMEN, BTU Cottbus-Senftenberg, Cottbus, Germany; C. CARTA, TU Berlin, Berlin, Germany
IC-4.B1:L38 Neural Information Processing and Time-Series Prediction with Only Two Dynamical Memristors
D. MOLNÁR1,2, T.N. TÖRÖK1,3, J. VOLK JR.1, R. KÖVECS1, L. PÓSA1,3, P. BALÁZS1, G. MOLNÁR3, N. JIMENEZ OLALLA4, Z. BALOGH1,2, J. VOLK3, J. LEUTHOLD4, M. CSONTOS4, A. HALBRITTER1,2, 1Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Budapest, Hungary; 2ELKH-BME Condensed Matter Research Group, Budapest, Hungary; 3Institute of Technical Physics and Materials Science, Centre for Energy Research, Budapest, Hungary; 4Institute of Electromagnetic Fields, ETH Zurich, Zurich, Switzerland
IC-4.B1:IL39 Receptron Hardware Platform for Real Time Learning and Classification
B. PAROLI, S. RADICE, F. BORGHI, M.A.C. POTENZA, P. MILANI, CIMAINA—Interdisciplinary Centre for Nanostructured Materials and Interfaces, Department of Physics “Aldo Pontremoli”, Università degli Studi di Milano, Milano, Italy
IC-4.B1:IL40 Resistive Switching Devices at the Crossroad of RF Switching and Flexible Electronics
A. KIAZADEH, T. MINGATES, J. DEUERMEIER, M. PEREIRA, A.G. KELLY, E. CARLOS, E. FORTUNATO, CENIMAT|i3N, Faculty of Science and Technology, NOVA University Lisbon, Caparica, Portugal
IC-4.B1:IL41 Memristors with Organic Self-Assembled Monolayers
P. KIRSCH, TU Darmstadt, Darmstadt, Germany; and Merck Electronics KGaA, Darmstadt, Germany
IC-4.B1:IL42 Molecular Neuromorphic Building Blocks for Artificial Intelligence
S. GOSWAMI, Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, India
IC-4.B1:L43 From Nature to Neuromorphic: Harnessing Nigella Melanin as a Green Material for Artificial Synapses
M. AMBRICO1, G. LUPIDI2, Gb. LUPIDI4, P.F. AMBRICO1, L. VALGIMIGLI3, S. MATTIELLO4, D. ACETO1, A. GUZZINI4, A. GRIGORYEVA5, A. DE STRADIS6, R. GUNNELLA4, 1CNR-ISTP - Bari Branch, Bari, Italy; 2School of Pharmaceutical Sciences and Health Products, University of Camerino, Camerino (Italy); 3Department of Chemistry “G. Ciamician”, University of Bologna, Bologna, Italy; 4International School Advanced Studies, University of Camerino, Camerino, Italy; 5Tecnopolo di Rimini, Rimini, Italy; 6CNR-IPSP, Bari Branch, Bari, Italy
Session IC-4.B2 Diffusive and volatile memristors
IC-4.B2:IL44 Diffusive Memristor Devices and Circuits for Neuromorphic Computing
QIANGFEI XIA, University of Massachusetts, Amherst, MA, USA
IC-4.B2:IL45 Investigation and Engineering of Switching and Relaxation Dynamics of Ag-based Diffusive Memristors
S. BRIVIO, M. DUTTA, A. BELLINGERI, F. VACCARO, S. SPIGA, CNR - IMM, Unit of Agrate Brianza, Agrate Brianza, Italy
IC-4.B2:L46 Effect of Al2O3 Layer Thickness and of Programming Parameters on Cumulative and Intrinsic Retention in Ag/Al2O3/SiOx/Pt Volatile Memristors
A. BELLINGERI1,2, S. BRIVIO1, S. SPIGA1, 1CNR - IMM, Unit of Agrate Brianza, Italy; 2Università degli Studi di Milano, Department of Physics “Aldo Pontremoli”, Italy
IC-4.B2:L47 Self-aligned Single-Nanoparticle Ag Memristors
M. FISCHER-BUTESHEVA, D. EGLIN, M. LEWERENZ, G.-L. FRANCHINI, E. PASSERINI, N. JIMENEZ OLALLA, K. SRIKRISHNAPRABHU, M. STECHER, R. GISLER, Y. FEDORYSHYN, M. CSONTOS, J. LEUTHOLD, Institute of Electromagnetic Fields, ETH Zurich, Zurich, Switzerlan
IC-4.B2:L48 Investigation of the Transient Behaviour of Volatile Electrochemical Metallization Cells Operated in Integrate-and-fire Neuron Circuits
J. RASBACH, NINGYUAN MA, R. WALIED AHMAD, S. MENZEL, S. HOFFMANN-EIFERT, Forschungszentrum Jülich GmbH, Peter Grünberg Institut 7, Jülich, Germany
IC-4.B2:L49 Volatile Amorphous-SrTiO3 Devices with Tunable Decay Time for Event-based Sensing
D. SPITHOURIS, J. HELLWIG, C. WITTBERG, R. DITTMANN, PGI-7, Forschungszentrum Jülich, NRW, Germany; H. GREATOREX, E. CHICCA, BICS Lab, Zernike Institute for Advanced Materials, University of Groningen, The Netherlands; CogniGron, University of Groningen, The Netherlands
IC-4.B2:L50 Three-Terminal Memristor with Tunable Volatility and Set-Voltage
K. SRIKRISHNAPRABHU, M. LEWERENZ, M. FISCHER-BUTESHEVA, E. PASSERINI, A. SCHNEUWLY, N.J. OLALLA, R. GISLER, M.A. STECHER, Institute of Electromagnetic Fields, ETH Zurich, SWITZERLAND; A. EMBORAS, M. LUISIER, Integrated Systems Laboratory, ETH Zurich, SWITZERLAND; M. CSONTOS, J. LEUTHOLD, Institute of Electromagnetic Fields, ETH Zurich, Switzerland
Session IC-4.C Brain inspired hardware and computing
IC-4.C:IL51 Modeling the Brain as a Complex Adaptive System: Computational Approaches to Information Transfer in Neuronal Circuits
D. GANDOLFI, University of Modena and Reggio Emilia, Modena, Italy
IC-4.C:IL52 Self-organizing Neuromorphic Networks as Dynamical Systems for Computing
G. MILANO1, C. RICCIARDI2, E. MIRANDA3, 1Advanced Materials Metrology and Life Science Division, INRiM (Istituto Nazionale di Ricerca Metrologica), Italy; 2Department of Applied Science and Technology, Politecnico di Torino, Italy; 3Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), Cerdanyola del Vallès, Spain
IC-4.C:L53 Reversible Self-assembly of Neuromorphic Particle Networks
S. VAN KESTEREN1, L. BÉGON-LOURS1, S. SACANNA2, 1ETH Zurich, Dept. of Information Technology and Electrical Engineering, Zurich, Switzerland; 2New York University, Department of Chemistry, New York, NY, USA
IC-4.C:L54 Programmable Connectivity of Self-assembled Materials for Algebraic and Classification Tasks on Edge Systems
F. BORGHI, D. DECASTRI, F. PROFUMO, P. MILANI, Physics Department and CIMaINa, University of Milano, Milano, Italy
IC-4.C:L55 Dense Ag/PVP-based Nanowire Networks for Brain-like Electronics
J. DIAZ SCHNEIDER, C. QUINTEROS, E. MARTÍNEZ, P. LEVY, Centro Atómico Bariloche, Comisión Nacional de Energía Atómica (CNEA), S. C. de Bariloche, Río Negro, Argentina; Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina; Instituto de Nanociencia y Nanotecnología (CNEA + CONICET), S.C. de Bariloche, Río Negro, Argentina ICIFI, (UNSAM-CONICET), San Martín, Argentina
IC-4.C:L56 Neurodynamic Circuits for Cochlear Implants and High-frequency Spike Encoding
T.N. TÖRÖK, M. HIZÓ, R. KÖVECS, ZS. POLLNER, A. HALBRITTER, Department of Physics, Budapest University of Technology and Economics, Budapest, Hungary; F. BRAUN, T. ZEFFER, N.Q. KHÁNH, L. PÓSA, J. VOLK, Institute of Technical Physics and Materials Science, HUN-REN Centre for Energy Research, Budapest, Hungary
IC-4.C:L57 High Frequency Neural Information Processing with Dynamical Memristors
D. MOLNAR, T.N. TÖRÖK, J. VOLK JR., A. HALBRITTER, Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Budapest, Hungary
IC-4.C:IL58 Ionic Nanoarchitectonics for Neuromorphic Computing
KAZUYA TERABE, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, Japan
IC-4.C:IL59 Electrochemical Ionic Synapses for Energy-Efficient Brain-Inspired Computing
BILGE YILDIZ, Massachusetts Institute of Technology, Cambridge, MA, USA
IC-4.C:IL60 Electrochemical Random Access Memory - Self Heating Opens a New Frontier
E.J. FULLER, Sandia National Laboratories, Livermore, CA, USA
IC-4.C:IL61 In-Materio Reservoir Computing Utilizing Spatiotemporal Dynamics of Ion, Electron, and Spin
T. TSUCHIYA, D. NISHIOKA, W. NAMIKI, R. IGUCHI, Y. SHINGAYA, K. TERABE, National Institute for Materials Science, Tsukuba, Ibaraki, Japan
IC-4.C:L62 Energy-Efficient Programming of First-Order Memristive Devices
V.A. SLIPKO1, A. ASCOLI2, F. CORINTO2, Y.V. PERSHIN3, 1Institute of Physics, Opole University, Opole, Poland; 2Department of Electronics and Telecommunications Politecnico di Torino, Turin, Italy; 3Department of Physics and Astronomy, University of South Carolina, Columbia, SC, USA